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SUP40P10-43
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
1 8 0
150
120
30
90
20
60
10
0
30
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating*
T C - Case Temperat u re (°C)
Power Derating, Junction-to-Case
* The power dissipation P D is based on T J(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10 -4
10 -3
10 -2
10 -1
1
Sq u are W a v e P u lse D u ration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65458 .
Document Number: 65458
S09-2035-Rev. A, 05-Oct-09
www.vishay.com
5
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